Chifukwa chakusoŵa kwa moissanite wachilengedwe, silicon carbide yambiri ndiyopanga.Imagwiritsidwa ntchito ngati abrasive, ndipo posachedwa ngati semiconductor ndi diamondi yoyeserera yamtengo wamtengo wapatali.Njira yosavuta yopangira ndikuphatikiza mchenga wa silika ndi kaboni mung'anjo yamagetsi ya Acheson graphite pa kutentha kwakukulu, pakati pa 1,600 °C (2,910 °F) ndi 2,500 °C (4,530 °F).Tinthu tating'onoting'ono ta SiO2 muzomera (mwachitsanzo mankhusu a mpunga) titha kusinthidwa kukhala SiC potenthetsa mpweya wochulukirapo kuchokera kuzinthu zachilengedwe.Utsi wa silika, womwe umapangidwa popanga zitsulo za silicon ndi ma aloyi a ferrosilicon, amathanso kusinthidwa kukhala SiC potenthetsa ndi graphite pa 1,500 °C (2,730 °F).
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh
Zina zapadera zitha kuperekedwa popempha.
Grit | Sic | FC | Fe2O3 |
F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
Grits | Kuchulukana Kwambiri (g/cm3) | Kuchulukana Kwambiri (g/cm3) | Grits | Kuchulukana Kwambiri (g/cm3) | Kuchulukana Kwambiri (g/cm3) |
F16 ~ F24 | 1.42-1.50 | ≥1.50 | F100 | 1.36-1.45 | ≥1.45 |
F30 ~ F40 | 1.42-1.50 | ≥1.50 | F120 | 1.34-1.43 | ≥1.43 |
F46 ~ F54 | 1.43-1.51 | ≥1.51 | F150 | 1.32-1.41 | ≥1.41 |
F60 ~ F70 | 1.40-1.48 | ≥1.48 | F180 | 1.31-1.40 | ≥1.40 |
F80 | 1.38-1.46 | ≥1.46 | F220 | 1.31-1.40 | ≥1.40 |
f90 | 1.38-1.45 | ≥1.45 |
Ngati muli ndi mafunso.Chonde khalani omasuka kulankhula nafe.